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PD-94604B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level RDS(on) IRHNA597064 100K Rads (Si) 0.016 IRHNA593064 300K Rads (Si) 0.016 ID -56A* -56A*
IRHNA597064 60V, P-CHANNEL
5
TECHNOLOGY
SMD-2
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page -56* -56 -224 250 2.0 20 725 -56 25 2.1 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
11/01/04
IRHNA597064
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-60 -- -- -2.0 40 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.064 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.0 -- -- 0.016 -4.0 -- -10 -25 -100 100 200 65 60 30 100 100 100 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -56A A VDS = VGS, ID = -1.0mA VDS = -25V, IDS = -56A A VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -56A VDS = -30V VDD = -30V, ID = -56A, VGS = -12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
7022 2897 267
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -56* -224 -5.0 200 500
Test Conditions
A
V ns nC Tj = 25C, IS = -56A, VGS = 0V A Tj = 25C, IF =-56A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- 1.6 0.5 --
C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA597064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-2) Diode Forward Voltage A 100K Rads(Si)1 Min Max -60 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.016 0.016 -5.0 300KRads(Si)2 Min Max -60 -2.0 -- -- -- -- -- -- -- -5.0 -100 100 -10 0.016 0.016 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V V GS = 20 V VDS = -48V, VGS =0V VGS = -12V, ID = -56A VGS = -12V, ID = -56A VGS = 0V, IS = -56A
1. Part number IRHNA597064 2. Part number IRHNA593064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 345 357 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 60 - 60 - 60 - 60 - 60 32.7 - 60 - 60 - 60 - 45 - 25 28.5 - 60 - 60 - 60 -- --
-70 -60 -50 -40 -30 -20 -10 0 0 5 10 VGS 15 20
Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
3
IRHNA597064
Pre-Irradiation
1000
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP
-I D, Drain-to-Source Current (A)
100
-5.0V
-I D, Drain-to-Source Current (A)
100
-5.0V
20s PULSE WIDTH Tj = 25C 10 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V)
20s PULSE WIDTH Tj = 150C 10 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
-75A ID = -56A
-I D, Drain-to-Source Current ( )
1.5
T J = 25C T J = 150C
1.0
0.5
VDS = -25V 15 20s PULSE WIDTH 100 5 5.5 6 6.5 7 7.5 8 -V GS, Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNA597064
12000
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds
16
-VGS, Gate-to-Source Voltage (V)
10000
Crss = C gd Coss = C + Cgd ds
ID = -56A 12
VDS= -48V VDS= -30V
C, Capacitance (pF)
8000
Ciss Coss
6000
8
4000
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 100 120 140 160 QG, Total Gate Charge (nC)
2000
Crss
0 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
-I SD , Reverse Drain Current ( )
1000
T J = 150C
100
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
10
T J = 25C
100s 1ms
10
1
10ms
Tc = 25C Tj = 150C Single Pulse 1 10 100 1000
0.1 0.5 1.5 2.5 3.5
VGS = 0V 4.5 5.5
1
-V SD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNA597064
Pre-Irradiation
100
LIMITED BY PACKAGE
VGS
80
V DS
RD
-ID , Drain Current (A)
60
VGS
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VGS 10%
td(on) tr t d(off) tf
0
25
50
75
100
125
150
90%
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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+
-
RG
D.U.T. V DD
Pre-Irradiation
IRHNA597064
VDS
L
1600
RG
D.U.T
IAS
+
DRIVER
VDD V DD A
EAS , Single Pulse Avalanche Energy (mJ)
VGS -20V
1200
tp
0.01
ID TOP -25A -35.4A BOTTOM -56A
800
15V
400
Fig 12a. Unclamped Inductive Test Circuit
I AS
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
-12 V
-12V 12V
.2F .3F
QGS
QGD
VDS
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IRHNA597064
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L= 0.46mH Peak IL = - 56A, VGS = -12V A ISD -56A, di/dt -360A/s, VDD -60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 11/2004
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